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| SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. KTA1543T EPITAXIAL PLANAR PNP TRANSISTOR E FEATURES Adoption of MBIT Processes. High Current Capacitance. Low Collector-to-Emitter Saturation Voltage. A F G K B DIM A B 2 3 C D MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 D Ultrasmall-sized Package Permitting Applied sets to be made small and slim. High Allowable Power Dissipation. Complementary to KTC3543T. C L G High-Speed Switching. 1 E F G H I J K L H J MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse ) SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg 0.8 ) RATING -30 -30 -6 -5 -7 -1.2 0.9 150 -55 150 UNIT V V V A A W J 1. EMITTER 2. BASE 3. COLLECTOR Marking Lot No. Type Name * Package mounted on a ceramic board (600 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=-30V, IE=0 VEB=-4V, IC=0 IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 IC=-2.5A, IB=-50mA IC=-2.5A, IB=-50mA VCE=-2V, IC=-500mA VCE=-10V, IC=-500mA VCB=-10V, f=1MHz PW=20s DC < 1% = IB1 I B2 RB 50 VR 100F 470F VCC =-12V RL OUTPUT MIN. -30 -30 -6 200 - Storage Time tstg Fall Time tf V BE =5V -20IB1=20IB2=IC =-2.5A 2001. 6. 29 Revision No : 0 I TSM SJ TYP. -140 -0.81 250 52 30 MAX. -0.1 -0.1 -210 -1.2 560 MHz pF UNIT A A V V V mV V - 190 - nS - 17 - 1/3 KTA1543T I C - V CE -5 COLLECTOR CURRENT I C (A) -10 0m A h FE - I C 1K DC CURRENT GAIN h FE A -50m mA -40 -30mA -4 -3 -2 -1 0 0 500 300 -90mA -80mA -70mA -60mA Ta=75 C Ta=25 C Ta=-25 C -20mA -10mA 100 50 30 VCE =-2V IB=0mA -100 -200 -300 -400 -500 10 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 COLLECTOR-EMITTER VOLTAGE VCE (mV) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1K -500 -300 -100 -50 -30 -10 -5 -3 -1 -0.01 C 75 Ta= C 25 Ta= Ta =-2 5C VCE(sat) - I C -1K -500 -300 I C /I B =50 I C /I B =20 -100 -50 -30 T 5C a=7 5 =-2 Ta C 5C =2 Ta -0.03 -0.1 -0.3 -1 -3 -10 -10 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VBE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) -10K -5K -3K I C /I B =50 I C - V BE -1.0 COLLECTOR CURRENT I C (A) -0.9 -0.8 -0.7 -0.6 Ta=75 C VCE =-2V -500 -300 Ta=25 C Ta=75 C -0.4 -0.3 -0.2 -0.1 0 0 -100 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (A) 2001. 6. 29 Revision No : 0 Ta=-25 Ta=25 -1K Ta=-25 C -0.5 C C 2/3 KTA1543T f T - IC COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) 1K 500 300 VCE =-10V C ob - V CB 1K 500 300 f=1MHz 100 50 30 100 50 30 10 -0.01 -0.03 -0.1 -0.3 -1 -3 10 -1 -3 -5 -10 -30 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT I C (A) SAFE OPERATING AREA -10 COLLECTOR CURRENT I C (A) -5 -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1 IC MAX.(PULSED) I C MAX (CONTINUOUS) DC OP ER Pc - Ta COLLECTOR POWER DISSIPATION PC (W) S* 0 S* 10 0 50 S* 1m 1.2 MOUNTED ON A 10 m 10 S* 1.0 0.8 0.6 0.4 0.2 0 CERAMIC BOARD (600mm 2 0.8mm) 0m S* AT IO N * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) 0 20 40 60 80 100 120 140 160 -0.3 -0.5 -1 -3 -5 -10 -30 -50 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE VCE (V) 2001. 6. 29 Revision No : 0 3/3 |
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